BSC0906NSATMA1
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Краткое описание:
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Дополнительная информация
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
| RoHS | Compliant |
| Width | 5.15mm |
| Height | 1.27mm |
| Length | 5.9mm |
| Weight | 0.003527oz |
| Polarity | N-CHANNEL |
| Fall Time | 6.4ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.4ns |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 30W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 63A |
| Drain to Source Voltage (Vdss) | 30V |
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