BSC100N06LS3GATMA1

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BSC100N06LS3GATMA1 - Infineon
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Краткое описание: 60V 12A N-Channel MOSFET, 10mR Rds(on), TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 60V drain-source voltage and 12A continuous drain current. Offers low on-state resistance of 7.8mΩ (typ.) and 10mΩ (max.). Designed for surface mount applications with a TDSON-8 plastic package, operating from -55°C to 150°C. Includes 8ns turn-on and 19ns turn-off delay times, with 3.5nF input capacitance. This RoHS compliant component supports 2.5W power dissipation.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 10mR
Halogen Free Halogen Free
RoHS Compliant Yes
Package Quantity 5000
Input Capacitance 3.5nF
Power Dissipation 2.5W
Number of Elements 1
Turn-On Delay Time 8ns
On-State Resistance 10mR
Turn-Off Delay Time 19ns
Max Power Dissipation 50W
Max Dual Supply Voltage 60V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 7.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 60V

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