BSC110N06NS3 G
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Краткое описание:
N-CH Power MOSFET 60V 50A TDSON EP SMT
Дополнительная информация
N-channel Power MOSFET, OptiMOS process technology, 60V drain-source voltage, 50A continuous drain current. Features 11mOhm maximum drain-source resistance at 10V, 25nC typical gate charge at 10V, and 2000pF typical input capacitance at 30V. Housed in an 8-pin TDSON EP surface-mount package (5.15mm x 5.9mm x 1mm) with a 1.27mm pin pitch. Single Quad Drain Triple Source configuration, operating from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TDSON EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.9 |
| Process Technology | OptiMOS |
| Package Family Name | SON |
| Package Height (mm) | 1 |
| Package Length (mm) | 5.15 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 25nC |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Input Capacitance @ Vds | 2000@30VpF |
| Maximum Continuous Drain Current | 50A |
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