BSC120N03MSGATMA1

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BSC120N03MSGATMA1 - Infineon
Краткое описание: N-Ch MOSFET, 30V, 11A, 12mR RdsOn, TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 30V Vdss, 11A continuous drain current, and 12mΩ Rds On. Features include 1.5nF input capacitance, 5ns fall time, and 7.9ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 28W. Surface mount TDSON-8 package, RoHS compliant, and halogen-free.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Fall Time 5ns
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 12mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 5000
Input Capacitance 1.5nF
Power Dissipation 2.5W
Number of Elements 1
Turn-On Delay Time 7.9ns
On-State Resistance 12mR
Radiation Hardening No
Turn-Off Delay Time 7ns
Max Power Dissipation 28W
Max Dual Supply Voltage 30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 30V

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