BSC160N10NS3 G
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Краткое описание:
N-CH Power MOSFET 100V 8.8A TDSON EP SMT
Дополнительная информация
N-channel Power MOSFET, OptiMOS process technology, 100V drain-source voltage, 8.8A continuous drain current, and 16mΩ maximum drain-source resistance at 10V. Features a single quad drain triple source configuration within an 8-pin TDSON EP surface-mount package. Operates from -55°C to 150°C with a maximum power dissipation of 60W.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TDSON EP |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.9 |
| Process Technology | OptiMOS |
| Package Family Name | SON |
| Package Height (mm) | 1 |
| Package Length (mm) | 5.15 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 19nC |
| Typical Gate Charge @ Vgs | 19@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Input Capacitance @ Vds | 1300@50VpF |
| Maximum Continuous Drain Current | 8.8A |
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