BSC265N10LSFGATMA1

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BSC265N10LSFGATMA1 - Infineon
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Краткое описание: 100V 40A N-Ch MOSFET, 26.5mR RdsOn, TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 100V Drain-Source Voltage, 40A Continuous Drain Current, and 26.5mΩ On-State Resistance. Features include a 1.85V Threshold Voltage, 1.6nF Input Capacitance, and a maximum power dissipation of 78W. This surface-mount device operates from -55°C to 150°C and is packaged in TDSON-8 with tin-matte contact plating. It is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 26.5mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 5000
Input Capacitance 1.6nF
Threshold Voltage 1.85V
On-State Resistance 26.5mR
Reach SVHC Compliant No
Max Power Dissipation 78W
Max Dual Supply Voltage 100V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 20mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 100V

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