BSC340N08NS3GATMA1

Производится
BSC340N08NS3GATMA1 - Infineon
Увеличить
Краткое описание: 80V 7A N-Ch MOSFET, 34mR Rds(on), TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 80V Vdss, 7A Continuous Drain Current, and 34mR Rds On. Features include 2ns fall time, 8ns turn-on delay, and 11ns turn-off delay. This single-element silicon FET offers a max power dissipation of 32W and operates from -55°C to 150°C. It is surface mountable in a TDSON-8 package and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Fall Time 2ns
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 34mR
Halogen Free Halogen Free
RoHS Compliant Yes
Input Capacitance 756pF
Power Dissipation 2.5W
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 11ns
Max Power Dissipation 32W
Max Dual Supply Voltage 80V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Drain to Source Voltage (Vdss) 80V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.