BSC360N15NS3GATMA1

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BSC360N15NS3GATMA1 - Infineon
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Краткое описание: 150V 33A N-Ch MOSFET, 36mR Rds On, TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 150V Drain to Source Voltage (Vdss), 33A Continuous Drain Current (ID), and 36mR On-State Resistance. Features include a 3V Threshold Voltage, 1.19nF Input Capacitance, and a maximum power dissipation of 74W. This surface-mount device operates from -55°C to 150°C and is packaged in TDSON-8 with Tin contact plating. It is RoHS compliant and designed for demanding power applications.
RoHS Compliant
Mount Surface Mount
Height 1.1mm
Series OptiMOS™
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 36mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 5000
Input Capacitance 1.19nF
Threshold Voltage 3V
Number of Channels 1
On-State Resistance 36mR
Reach SVHC Compliant No
Max Power Dissipation 74W
Max Dual Supply Voltage 150V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 36mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 33A
Drain to Source Voltage (Vdss) 150V
Drain to Source Breakdown Voltage 150V

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