BSC500N20NS3GATMA1
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Краткое описание:
200V 24A N-Channel MOSFET, 50mR RdsOn, TDSON-8
Дополнительная информация
N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 24A Continuous Drain Current (ID), and 50mΩ On-State Resistance (Rds On Max). Features include 1.58nF input capacitance, 96W maximum power dissipation, and operation across a -55°C to 150°C temperature range. This silicon, metal-oxide semiconductor field-effect transistor is designed for surface mounting in a TDSON-8 plastic package with tin contact plating. It is RoHS compliant and utilizes a 1-element configuration.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Input Capacitance | 1.58nF |
| Power Dissipation | 96W |
| On-State Resistance | 50mR |
| Max Power Dissipation | 96W |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 200V |
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