BSD235CH6327XTSA1

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BSD235CH6327XTSA1 - Infineon
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Краткое описание: N and P-Channel JFET, SOT-363, -20V, 530mA, 500mW
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The Infineon BSD235CH6327XTSA1 is a N and P-Channel Junction Field-Effect Transistor (JFET) packaged in a SOT-363 surface mount package. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 500mW. The device is halogen free and lead free, and is compliant with RoHS regulations. The JFET has a maximum drain to source voltage of -20V and a continuous drain current of 530mA. The on-state resistance is 350mR, and the input capacitance is 47pF.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
FET Type N and P-Channel
Lead Free Lead Free
Packaging Cut Tape
Rds On Max 350mR
Halogen Free Halogen Free
Package/Case SOT-363
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 47pF
Power Dissipation 500mW
On-State Resistance 350mR
Reach SVHC Compliant No
Max Power Dissipation 500mW
Max Dual Supply Voltage -20V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 266mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 530mA
Drain to Source Voltage (Vdss) -20V

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