BSP 297

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BSP 297 - Infineon
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Краткое описание: N-CH MOSFET 200V 0.66A SOT-223 Surface Mount
Производитель Infineon
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode MOSFET for surface mount applications. Features 200V drain-source voltage and 0.66A continuous drain current. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, offering a package height of 1.6mm. SIPMOS process technology ensures efficient switching with a typical gate charge of 12.9nC and low input capacitance. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1800mW.
PCB 3
Tab Tab
ECCN EAR99
Jedec TO-261AA
EU RoHS Yes
Category Small Signal
HTS Code 8541290095
Mounting Surface Mount
Cage Code CG091
Pin Count 4
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOT-223
AEC Qualified Yes
Configuration Single Dual Drain
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 3.5
Process Technology SIPMOS
Package Description Small Outline Transistor
Package Family Name SOT
Package Height (mm) 1.6
Package Length (mm) 6.5
Radiation Hardening No
Seated Plane Height (mm) 1.8(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1800mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 12.9nC
Typical Gate Charge @ Vgs 12.9@10VnC
Typical Output Capacitance 38pF
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 200V
Maximum Gate Threshold Voltage 1.8V
Maximum Drain Source Resistance 1800@10VmOhm
Typical Input Capacitance @ Vds 286@25VpF
Maximum Continuous Drain Current 0.66A

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