BSP125H6327XTSA1
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Краткое описание:
600V N-Channel MOSFET, 120mA ID, 45Ω RDS(on), SOT-223
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, and 45 Ohm On-State Resistance. This silicon Metal-oxide Semiconductor FET features a 1.8W power dissipation and a 1-element configuration. Designed for surface mounting in a SOT-223 plastic package, it offers fast switching with a 7.7ns turn-on delay and 20ns turn-off delay. Operating across a wide temperature range of -55°C to 150°C, this component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | BSP125 |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 100pF |
| Power Dissipation | 1.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.7ns |
| On-State Resistance | 45R |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 1.8W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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