BSP149H6906XTSA1
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N-Ch MOSFET, 200V, 660mA, 1.8R, SOT-223, SM
Дополнительная информация
N-channel MOSFET transistor for surface mount applications, featuring a 200V drain-to-source breakdown voltage and 660mA continuous drain current. This single-element device offers a low Rds On of 1.8 Ohms at a 10V gate-source voltage, with a maximum power dissipation of 1.8W. The SOT-223 package with tin contact plating ensures reliable performance across a wide operating temperature range of -55°C to 150°C. Fast switching characteristics are evident with a 5.1ns turn-on delay and 21ns fall time. This component is RoHS and Halogen free, supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8R |
| Halogen Free | Halogen Free |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1000 |
| Input Capacitance | 430pF |
| Power Dissipation | 1.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.1ns |
| Turn-Off Delay Time | 45ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.8W |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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