BSP171PH6327XTSA1
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Краткое описание:
P-Channel JFET, 60V, 1.9A ID, SOT-223, Surface Mount
Дополнительная информация
P-channel, silicon, surface-mount JFET with a 60V drain-to-source breakdown voltage and 1.9A continuous drain current. Features a 300mΩ on-state resistance and a 1.5V threshold voltage. Operates across a -55°C to 150°C temperature range with a 1.8W maximum power dissipation. Packaged in a SOT-223 plastic package, this halogen-free and lead-free component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.7mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | SIPMOS® |
| Current | 19A |
| Voltage | 60V |
| Polarity | P-CHANNEL |
| Fall Time | 87ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1000 |
| Input Capacitance | 460pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 1.5V |
| On-State Resistance | 300mR |
| Turn-Off Delay Time | 208ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain to Source Breakdown Voltage | 60V |
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