BSP295H6327XTSA1

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BSP295H6327XTSA1 - Infineon
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Краткое описание: N-Channel MOSFET, 60V, 1.8A, 300mΩ, SOT-223, Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 60V Vds, 1.8A Continuous Drain Current. Features 300mΩ Rds On, 1.8W Power Dissipation, and 150°C Max Operating Temperature. Surface mountable in a SOT-223 plastic package with tin plating. Includes 368pF input capacitance and 19ns fall time.
RoHS Compliant
Mount Surface Mount
Series SIPMOS®
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 300mR
Halogen Free Halogen Free
Package/Case SOT-223
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1000
Input Capacitance 368pF
Power Dissipation 1.8W
Number of Elements 1
Turn-Off Delay Time 27ns
Max Power Dissipation 1.8W
Max Dual Supply Voltage 60V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 220mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.8A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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