BSP296NH6327XTSA1

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BSP296NH6327XTSA1 - Infineon
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Краткое описание: N-Channel MOSFET, 100V, 1.2A, 600mR, SOT-223, Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel silicon MOSFET, 100V drain-source voltage, 1.2A continuous drain current, and 0.6 ohm drain-source resistance. Features include a 1.6mm height, 6.5mm length, and 3.5mm width in a SOT-223 surface-mount plastic package with tin contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 1.8W. This component is halogen-free, lead-free, and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.6mm
Length 6.5mm
Series OptiMOS™
Weight 0.008826oz
Polarity N-CHANNEL
Fall Time 21.4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 600mR
Halogen Free Halogen Free
Package/Case SOT-223
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1000
Input Capacitance 152.7pF
Number of Channels 1
Turn-On Delay Time 5.2ns
Turn-Off Delay Time 37.4ns
Max Power Dissipation 1.8W
Max Dual Supply Voltage 100V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 700mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.2A
Drain to Source Voltage (Vdss) 100V

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