BSP299L6327
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N-CH MOSFET, 500V, 400mA, 4R, SOT-223
Дополнительная информация
N-channel logic-level MOSFET, SOT-223-4 package, offering 500V drain-to-source breakdown voltage and 400mA continuous drain current. Features low 4 Ohm drain-to-source resistance (Rds On Max) and a 3V nominal gate-to-source voltage (Vgs) for logic-level switching. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Supplied on a tape and reel for surface mount applications, this RoHS compliant component boasts fast switching times with a turn-on delay of 8ns and fall time of 15ns.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 6.7mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOT-223-4 |
| Current Rating | 400mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 500V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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