BSP300H6327XUSA1

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BSP300H6327XUSA1 - Infineon
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Краткое описание: 800V N-Channel MOSFET, 190mA ID, 20 Ohm Rds(on), SOT-223
Производитель Infineon
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, 800V Drain-Source Voltage, 190mA Continuous Drain Current, 20 Ohm On-State Resistance. Features 2A current capability, 230pF input capacitance, and 20V Gate-Source Voltage. Operates from -55°C to 150°C with 1.8W maximum power dissipation. Surface mountable in a 4-pin SOT-223 plastic package, supplied on tape and reel. Halogen and lead-free, RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.6mm
Length 6.5mm
Series SIPMOS®
Current 2A
Voltage 800V
Polarity N-CHANNEL
Fall Time 21ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 20R
Halogen Free Halogen Free
Package/Case SOT-223
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 230pF
Power Dissipation 1.8W
Number of Elements 1
Turn-On Delay Time 7ns
On-State Resistance 20R
Turn-Off Delay Time 27ns
Max Power Dissipation 1.8W
Max Dual Supply Voltage 800V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 15R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 190mA
Drain to Source Voltage (Vdss) 800V

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