BSP324H6327XTSA1
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N-Channel MOSFET, 400V, 170mA, 25Ω, SOT-223
Дополнительная информация
N-Channel Power MOSFET, 400V Vdss, 170mA Continuous Drain Current, 25 Ohm Rds On. This single-element silicon Metal-Oxide Semiconductor FET features a 1.9V threshold voltage and a maximum power dissipation of 1.8W. Designed for surface mounting, it comes in a SOT-223 package with tin contact plating. Operating temperature range is -55°C to 150°C, with fast switching characteristics including a 4.6ns turn-on delay and 17ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | SIPMOS® |
| Polarity | N-CHANNEL |
| Fall Time | 68ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25R |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1000 |
| Input Capacitance | 154pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 1.9V |
| Number of Elements | 1 |
| Turn-On Delay Time | 4.6ns |
| On-State Resistance | 22R |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Dual Supply Voltage | 400V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.6R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Voltage (Vdss) | 400V |
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