BSP372NH6327XTSA1
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Краткое описание:
N-Ch MOSFET, 100V, 1.8A, SOT-223, Surface Mount
Дополнительная информация
N-Channel MOSFET, 100V Vds, 1.8A Continuous Drain Current. Features 153mΩ Drain to Source Resistance at Vgs=10V, 230mΩ Rds On Max. Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 1.4V. This single-element, surface-mount transistor is housed in a SOT-223 plastic package with tin plating, offering a maximum power dissipation of 1.8W. It is RoHS compliant and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.7mm |
| Series | OptiMOS™ |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 230mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1000 |
| Input Capacitance | 329pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | 1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 230mR |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 153mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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