BSP613PH6327XTSA1

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BSP613PH6327XTSA1 - Infineon
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Краткое описание: P-CHANNEL MOSFET SOT-223 2.9A 110mR -60V 150°C
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The BSP613PH6327XTSA1 is a P-CHANNEL MOSFET from Infineon, packaged in a SOT-223 case and featuring a maximum continuous drain current of 2.9A. It has a drain to source resistance of 110mR and can withstand a drain to source voltage of -60V. The device is rated for operation up to 150°C and has a maximum power dissipation of 1.8W. It is lead free and RoHS compliant, making it suitable for use in a variety of applications.
RoHS Compliant
Mount Surface Mount
Series SIPMOS®
Polarity P-CHANNEL
Fall Time 7ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 130mR
Halogen Free Halogen Free
Package/Case SOT-223
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1000
Input Capacitance 875pF
Turn-Off Delay Time 26ns
Max Power Dissipation 1.8W
Max Dual Supply Voltage -60V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 110mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.9A
Drain to Source Voltage (Vdss) -60V

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