BSP613PL6327
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Краткое описание:
P-CH MOSFET 60V 2.9A 130mR SOT-223 Surface Mount
Дополнительная информация
P-channel MOSFET, 60V drain-source breakdown voltage, 2.9A continuous drain current. Features 130mΩ drain-source resistance (Rds On Max) and 1.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-223-4 surface-mount case, this RoHS compliant component offers fast switching with a 9ns fall time and 6.7ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SIPMOS® |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 130mR |
| Nominal Vgs | -3V |
| Package/Case | SOT-223-4 |
| Current Rating | -2.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 875pF |
| Power Dissipation | 1.8W |
| Threshold Voltage | -3V |
| Turn-On Delay Time | 6.7ns |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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