BSR315PL6327HTSA1
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P-Channel JFET, 60V, 620mA, 800mR Rds(on), TO-236-3
Дополнительная информация
P-channel JFET for small signal applications, featuring a 60V drain-to-source breakdown voltage and 620mA continuous drain current. This surface-mount device offers a low on-resistance of 800mΩ and a threshold voltage of -1.5V. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with turn-on delay of 8ns and fall time of 28ns. Packaged in a compact SC-59 (TO-236-3) plastic housing with tin-matte plating, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| Series | SIPMOS® |
| Polarity | P-CHANNEL |
| Fall Time | 28ns |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 176pF |
| Power Dissipation | 500mW |
| Threshold Voltage | -1.5V |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 620mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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