BSS119NH6327XTSA1
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N-Channel MOSFET, 100V, 190mA, 6 Ohm, SOT-23, Surface Mount
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 190mA and a drain-to-source breakdown voltage of 100V. Offers a low on-resistance (Rds On) of 6 Ohms and a maximum power dissipation of 500mW. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a turn-on delay time of 2.7ns and a fall time of 18.8ns. This RoHS and Halogen Free compliant component utilizes tin contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 18.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6R |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Input Capacitance | 20.9pF |
| Power Dissipation | 500mW |
| Turn-On Delay Time | 2.7ns |
| Turn-Off Delay Time | 7ns |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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