BSS123-7-F

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BSS123-7-F - Diodes
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Краткое описание: N-CH MOSFET 100V 170mA 6R SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET transistor for surface mount applications in a SOT-23 package. Features a 100V drain-source voltage (Vdss) and a continuous drain current (ID) of 170mA. Offers a low drain-source on-resistance (Rds On) of 6 Ohms. Operates with a gate-source voltage (Vgs) up to 20V and a nominal threshold voltage of 1.4V. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 8ns. Rated for a maximum power dissipation of 300mW and operates within a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 1mm
Length 2.9mm
Weight 0.000282oz
Voltage 100V
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6R
Nominal Vgs 1.4V
Package/Case SOT-23
Current Rating 170mA
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 3000
Input Capacitance 60pF
Power Dissipation 300mW
Threshold Voltage 1.4V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 13ns
Reach SVHC Compliant No
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170mA
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 6R

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