BSS127SSN-7
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Краткое описание:
N-Channel JFET, 600V, 50mA ID, 160R Rds(on), TO-236-3
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET for general switching applications. Features a 600V Drain to Source Voltage (Vdss) and a continuous drain current of 50mA. Offers a low Drain to Source Resistance (Rds On Max) of 160 Ohms. This surface mount device is housed in a compact SC-59 (TO-236-3) package with matte tin plating. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 168ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160R |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 21.8pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 28.7ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 610mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50mA |
| Drain to Source Voltage (Vdss) | 600V |
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