BSS138
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N-channel logic-level MOSFET, 50 V 220 mA SOT-23
Дополнительная информация
N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.
| Pin 1 | Gate |
| Pin 2 | Source |
| Pin 3 | Drain |
| Package | SOT-23 |
| MSL Type | 1 |
| Gate Level | Logic Level |
| Lead Status | Pb Free |
| Case Outline | 318 |
| Halogen Status | Halogen Free |
| MSL Temperature | 260°C |
| Transistor Type | N-Channel MOSFET |
| Gate-Source Voltage | ±20V |
| Drain-Source Voltage | 50V |
| Pulsed Drain Current | 0.88A |
| RDS(on) Max at VGS 10 V | 3.5ohm |
| Continuous Drain Current | 0.22A |
| RDS(on) Max at VGS 4.5 V | 6.0ohm |
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