BSS138K
Производится
Увеличить
Краткое описание:
N-Ch JFET, 50V, 220mA, 1.6 Ohm, SOT-23, Surface Mount
Дополнительная информация
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V Drain to Source Breakdown Voltage, 220mA Continuous Drain Current, and 1.6 Ohm maximum Drain-Source On Resistance. This single-element transistor features a 600mV nominal Gate to Source Voltage and 58pF input capacitance. Packaged in a SOT-23 surface mount case with tin, matte contact plating, it operates from -55°C to 150°C with 350mW maximum power dissipation. Ideal for switching applications, it offers fast switching speeds with turn-on delay times of 5ns and fall times of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.93mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6R |
| Nominal Vgs | 600mV |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 58pF |
| Power Dissipation | 350mW |
| Threshold Voltage | 600mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 1.6R |
| Drain to Source Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
