BSS138NH6327XTSA2
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N-Channel MOSFET, 60V, 230mA, SOT-23, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 230mA, a drain-to-source voltage of 60V, and a maximum power dissipation of 360mW. Offers a low on-state resistance of 3.5 Ohms and fast switching speeds with turn-on delay time of 2.3ns and fall time of 8.2ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Series | SIPMOS® |
| Current | 2A |
| Voltage | 50V |
| Fall Time | 8.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5R |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 41pF |
| Power Dissipation | 360mW |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.3ns |
| On-State Resistance | 3.5R |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6.7ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 360mW |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Voltage (Vdss) | 60V |
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