BSS138TA
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N-Channel MOSFET, 50V, 200mA, SOT-23, 3.5R Rds(on)
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 50V Drain-to-Source Voltage (Vdss) and a continuous drain current of 200mA. Offers a low Drain-to-Source On-Resistance (Rds On) of 3.5 Ohms maximum. Packaged in a compact SOT-23 surface-mount case with tin, matte contact plating. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5R |
| Nominal Vgs | 1.5V |
| Package/Case | SOT-23 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 50V |
| Package Quantity | 1 |
| Input Capacitance | 50pF |
| Power Dissipation | 350mW |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 3.5R |
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