BSS139H6327XTSA1
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N-Channel JFET, 250V, 100mA, SOT-23, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 250V Drain to Source Voltage (Vdss) and 100mA Continuous Drain Current (ID). Surface mountable in a SOT-23 plastic package with tin, matte contact plating. Offers a nominal Gate to Source Voltage (Vgs) of -1.4V and an On-State Resistance (Rds On) of 14 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Series | SIPMOS® |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14R |
| Nominal Vgs | -1.4V |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 76pF |
| Power Dissipation | 360mW |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 14R |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 360mW |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 250V |
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