BSS209PWH6327XTSA1
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P-Channel JFET, 20V, 630mA ID, SOT-323, Surface Mount
Дополнительная информация
P-Channel JFET, designed for small signal applications. Features a continuous drain current of 630mA and a drain-to-source breakdown voltage of -20V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Surface mountable in a SOT-323 package, this silicon MOSFET offers a low on-state resistance of 550mR and fast switching times with turn-on delay of 2.6ns and turn-off delay of 6ns. Halogen and lead-free, it is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Series | OptiMOS™ |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-323 |
| Current Rating | -580mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 115pF |
| Power Dissipation | 300mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.6ns |
| On-State Resistance | 550mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Max Power Dissipation | 300mW |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain to Source Breakdown Voltage | -20V |
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