BSS214NWH6327XTSA1
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 20V, 1.5A, 140mR Rds On, SOT-323
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 20V Drain-to-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers low on-state resistance of 140mR at a Gate-to-Source Voltage (Vgs) of 12V. Packaged in a compact SOT-323 surface-mount plastic package, this device is halogen-free and lead-free, suitable for operation across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 4.1ns and fall time of 1.4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 1.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 140mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 143pF |
| Power Dissipation | 500mW |
| Threshold Voltage | 950mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.1ns |
| On-State Resistance | 140mR |
| Turn-Off Delay Time | 6.8ns |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 171mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
