BSS225H6327FTSA1
Производится
Увеличить
Краткое описание:
600V N-Channel MOSFET, 90mA ID, SOT-89, Surface Mount
Дополнительная информация
N-Channel JFET, 600V Vdss, 90mA continuous drain current, and 28Ω drain-to-source resistance. This surface-mount transistor features a 1W power dissipation, 131pF input capacitance, and 41ns fall time. Operates from -55°C to 150°C, housed in a SOT-89 plastic package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SIPMOS® |
| Polarity | N-CHANNEL |
| Fall Time | 41ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45R |
| Halogen Free | Not Halogen Free |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 131pF |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Turn-Off Delay Time | 62ns |
| Max Power Dissipation | 1W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
