BSS306NH6327XTSA1
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Краткое описание:
N-Channel MOSFET, 30V, 2.3A ID, SOT-23, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 2.3A and a drain-to-source breakdown voltage of 30V. Offers a low on-state resistance of 57mR at a gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | OptiMOS™ |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 57mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 275pF |
| Power Dissipation | 500mW |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 57mR |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 44mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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