BSS314PEH6327XTSA1
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Краткое описание:
P-Ch JFET, 1.5A ID, -30V Vdss, SOT-23, Surface Mount
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source voltage of -30V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a 3-pin SOT-23 surface-mount plastic package, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 140mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Input Capacitance | 294pF |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | -30V |
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