BSS316NH6327XTSA1
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Краткое описание:
N-Channel MOSFET, 30V, 1.4A, SOT-23, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 1.4A, 30V drain-to-source breakdown voltage, and 160mR maximum on-state resistance. Operates across a wide temperature range from -55°C to 150°C with 500mW maximum power dissipation. Includes a 1.6V threshold voltage and fast switching times with a 1ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1.1mm |
| Length | 2.9mm |
| Series | OptiMOS™ |
| Fall Time | 1ns |
| Lead Free | Lead Free |
| Rds On Max | 160mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 94pF |
| Power Dissipation | 500mW |
| Threshold Voltage | 1.6V |
| Number of Channels | 1 |
| Turn-On Delay Time | 3.4ns |
| On-State Resistance | 160mR |
| Turn-Off Delay Time | 5.8ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 119mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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