BSS606NH6327XTSA1

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BSS606NH6327XTSA1 - Infineon
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Краткое описание: N-CHANNEL JFET, 3.2A, 60V, 20V, SOT-89
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The BSS606NH6327XTSA1 is a surface mount N-CHANNEL junction field-effect transistor with a maximum continuous drain current of 3.2A and a maximum drain to source voltage of 60V. It features a drain to source resistance of 60mR and a gate to source voltage of 20V. The device is packaged in a halogen-free and lead-free SOT-89 package and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 60mR
Halogen Free Halogen Free
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 657pF
Power Dissipation 1W
Number of Elements 1
Max Power Dissipation 1W
Max Dual Supply Voltage 60V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.2A
Drain to Source Voltage (Vdss) 60V

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