BSS63LT1G

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BSS63LT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 100V VCEO, 100mA IC, 95MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor in a SOT-23-3 package. Features 100V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 95MHz transition frequency and offers a minimum hFE of 30. Rated for 150°C maximum operating temperature and supplied on a 3000-piece tape and reel. RoHS compliant and halogen-free.
RoHS Compliant
Width 1.4mm
Height 1.11mm
Length 3.04mm
hFE Min 30
Polarity PNP
Frequency 95MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 95MHz
Current Rating -100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -100V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 95MHz
Max Breakdown Voltage 100V
Max Collector Current 100mA
Max Power Dissipation 225mW
Gain Bandwidth Product 95MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 110V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage -250mV

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