BSS806NEH6327XTSA1
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Краткое описание:
N-Channel JFET, 20V, 2.3A ID, 57mR Rds On, SOT-23
Дополнительная информация
N-channel silicon MOSFET, surface mountable in a SOT-23 package. Features a continuous drain current of 2.3A, drain-to-source voltage of 20V, and low on-resistance of 57mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. Includes fast switching characteristics with turn-on delay time of 7.5ns and fall time of 3.7ns. Halogen and lead-free, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Series | OptiMOS™ |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 3.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 57mR |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Input Capacitance | 529pF |
| Power Dissipation | 500mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.5ns |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 500mW |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 57mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 20V |
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