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P-CH MOSFET, 50V, 130mA, SOT-23, 10R
Дополнительная информация
P-channel MOSFET, 50V drain-source breakdown voltage, 130mA continuous drain current, and 10 Ohm drain-source on-resistance. This surface-mount transistor features a 2.5ns turn-on delay and 6.3ns fall time, with a nominal gate-source threshold voltage of -1.7V. Packaged in a 3-pin SOT-23, it operates from -55°C to 150°C with a maximum power dissipation of 360mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 0.93mm |
| Length | 2.92mm |
| Voltage | 50V |
| Polarity | P-CHANNEL |
| Fall Time | 6.3ns |
| Packaging | Tape and Reel |
| Rds On Max | 10R |
| Nominal Vgs | -1.7V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | -130mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Input Capacitance | 73pF |
| Power Dissipation | 360mW |
| Threshold Voltage | -1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.5ns |
| Dual Supply Voltage | -50V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 130mA |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 10R |
| Drain to Source Breakdown Voltage | -50V |
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