BSS8402DW-7-F
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Краткое описание:
N/P-Channel JFET, 60V, 115mA, 2-Element, SOT-363
Дополнительная информация
Surface mount dual N-channel and P-channel silicon JFET with 60V dual supply voltage and 115mA continuous drain current. Features a 2.5V threshold voltage, 10 Ohm maximum drain-source on-resistance, and 50pF input capacitance. Operates within a -55°C to 150°C temperature range, with 200mW maximum power dissipation. Packaged in a 6-pin SOT-363 plastic package with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5R |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| Current Rating | 115mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 200mW |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Voltage (Vdss) | -50V |
| Drain-source On Resistance-Max | 10R |
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