BSS84PH6327XTSA2
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P-Channel JFET, 60V, 170mA, SOT-23, Surface Mount
Дополнительная информация
P-channel, single-element silicon MOSFET for small signal applications. Features a continuous drain current of 170mA and a drain-to-source voltage of -60V. Offers a low on-state resistance of 8 Ohms and a drain-to-source resistance of 12 Ohms. Packaged in a compact SOT-23 surface-mount plastic package with tin, matte plating, and supplied on tape and reel. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 900um |
| Length | 2.9mm |
| Series | SIPMOS® |
| Voltage | 60V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Resistance | 12R |
| Nominal Vgs | -1.5V |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Input Capacitance | 19pF |
| Power Dissipation | 360mW |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 8R |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 360mW |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Voltage (Vdss) | -60V |
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