BSZ036NE2LSATMA1

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BSZ036NE2LSATMA1 - Infineon
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Краткое описание: 25V 16A N-Channel MOSFET, 0.0051ohm, TSDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 25V drain-source voltage, 16A continuous drain current, and 0.0051 ohm on-resistance. Features a 2V threshold voltage, 2.2ns fall time, 3.3ns turn-on delay, and 15ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 37W. Surface mountable in a TSDSON-8 package, this RoHS compliant component is designed for efficient power switching applications.
RoHS Compliant
Mount Surface Mount
Fall Time 2.2ns
Lead Free Contains Lead
Halogen Free Halogen Free
RoHS Compliant Yes
Threshold Voltage 2V
Turn-On Delay Time 3.3ns
Turn-Off Delay Time 15ns
Reach SVHC Compliant No
Max Power Dissipation 37W
Max Dual Supply Voltage 25V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 25V

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