BSZ086P03NS3EGATMA1

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BSZ086P03NS3EGATMA1 - Infineon
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Краткое описание: OptiMOS MOSFET N-Channel 13.5A -30V 150°C Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The Infineon BSZ086P03NS3EGATMA1 is a surface mount N-channel MOSFET with a maximum continuous drain current of 13.5A and a maximum drain to source voltage of -30V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 69W. The device features a threshold voltage of -2.5V and a maximum Rds on of 8.6mR. It is packaged in a small outline S-PDSO-N5 package and is compliant with RoHS regulations.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Fall Time 8ns
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 8.6mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin, Matte
Input Capacitance 4.785nF
Power Dissipation 69W
Threshold Voltage -2.5V
Number of Elements 1
Turn-On Delay Time 16ns
Turn-Off Delay Time 35ns
Reach SVHC Compliant No
Max Power Dissipation 69W
Max Dual Supply Voltage -30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13.5A
Drain to Source Voltage (Vdss) -30V

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