BSZ0901NSI
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Дополнительная информация
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.1mR |
| Resistance | 0.0009R |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 69W |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
