BSZ0902NSATMA1

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BSZ0902NSATMA1 - Infineon
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Краткое описание: 30V 40A N-Channel MOSFET, 2.6mR Rds(on), Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

High-performance N-channel Power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This surface-mount device offers a low 2.6mΩ Rds(on) and is designed for efficient power switching with fast switching times, including a 3.6ns fall time and 4.2ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it supports up to 48W power dissipation and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Fall Time 3.6ns
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 2.6mR
Halogen Free Halogen Free
RoHS Compliant Yes
Input Capacitance 1.7nF
Threshold Voltage 2V
Turn-On Delay Time 4.2ns
Turn-Off Delay Time 21ns
Reach SVHC Compliant No
Max Power Dissipation 48W
Max Dual Supply Voltage 30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 30V

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