BSZ120P03NS3GATMA1
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Краткое описание:
Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Дополнительная информация
Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 12mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Input Capacitance | 3.36nF |
| Threshold Voltage | -2.5V |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.1W |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | -30V |
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