BSZ180P03NS3EGATMA1

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BSZ180P03NS3EGATMA1 - Infineon
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Краткое описание: N-Channel MOSFET 39.5A -30V 2.1W Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The BSZ180P03NS3EGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum continuous drain current of 39.5A and a maximum drain to source voltage of -30V. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 2.1W. The device is packaged in a small outline S-PDSO-F5 package and is RoHS compliant. It features a threshold voltage of -2.5V and a maximum on-resistance of 18mR.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 18mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Input Capacitance 2.22nF
Threshold Voltage -2.5V
Reach SVHC Compliant No
Max Power Dissipation 2.1W
Max Dual Supply Voltage -30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 39.5A
Drain to Source Voltage (Vdss) -30V

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