BSZ520N15NS3 G
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Краткое описание:
N-CH Power MOSFET 150V 21A OptiMOS TSDSON EP
Дополнительная информация
N-channel enhancement mode power MOSFET featuring OptiMOS process technology. 150V drain-source voltage and 21A continuous drain current capability. 8-pin TSDSON EP surface-mount package with no leads, measuring 3.3mm x 3.3mm x 1mm. Offers low drain-source on-resistance of 52mOhm at 10V. Suitable for automotive applications with a wide operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TSDSON EP |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 3.3 |
| Process Technology | OptiMOS |
| Package Family Name | SON |
| Package Height (mm) | 1 |
| Package Length (mm) | 3.3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 57000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8.7nC |
| Typical Gate Charge @ Vgs | 8.7@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Drain Source Resistance | 52@10VmOhm |
| Typical Input Capacitance @ Vds | 670@75VpF |
| Maximum Continuous Drain Current | 21A |
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